technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/556 t4-lds-0176 rev. 1 (101183) page 1 of 4 devices levels 2N6784 2N6784u jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) to-205af (formerly to-39) u ? 18 lcc parameters / test conditions symbol value unit drain ? source voltage v ds 200 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 2.25 adc continuous drain current t c = +100c i d2 1.5 adc max. power dissipation p tl 15 (1) w drain to source on state resistance r ds(on) 1.5 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.12 w/c for t c > +25c (2) v gs = 10vdc, i d = 1.5a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25ma, t j = +125c v ds v gs , i d = 0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 160v v gs = 0v, v ds = 160v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on -state resistance v gs = 10v, i d = 1.5a pulsed v gs = 10v, i d = 2.25a pulsed t j = +125c v gs = 10v, i d = 1.5a pulsed r ds(on)1 r ds(on)2 r ds(on)3 1.5 1.6 2.81 diode forward voltage v gs = 0v, i d = 2.25a pulsed v sd 1.5 vdc
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0176 rev. 1 (101183) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: q g(on) q gs q gd 8.6 1.5 5.5 nc on-state gate charge gate to source charge gate to drain charge v gs = 10v, i d = 2.25a v ds = 100v switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 2.25a, v gs = 10vdc, gate drive impedance = 7.5 , v dd = 100vdc t d(on) t r t d(off) t f 15 20 30 20 ns diode reverse recovery time di/dt 100a/s, v dd 50v, i f = 2.25a t rr 350 ns
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0176 rev. 1 (101183) page 3 of 4 package dimensions ltr dimensions inches millimeters notes min max min max cd .305 .355 7.75 9.02 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.39 h .009 .041 0.23 1.04 j .028 .034 0.72 0.86 2 k .029 .045 0.74 1.14 3 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.7 19.05 7, 8 ls .200 tp 5.08 tp 6 lu .016 .019 0.41 0.48 7, 8 l 1 .050 1.27 7, 8 l 2 .250 6.35 7, 8 p .070 1.78 5 q .050 1.27 4 r .010 0.25 9 45 tp 45 tp 6 notes: 1 dimensions are in inches. millimeters are given for general information only. 2 beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3 dimension k measured from maximum hd. 4 outline in this zone is not controlled. 5 dimension cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6 leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7 lu applies between l1 and l2. ld applies between l2 and l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8 all three leads. 9 radius (r) applies to both inside corners of tab. 10 drain is electrically connected to the case. 11 in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 1. physical dimensions for to-205af .
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0176 rev. 1 (101183) page 4 of 4 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 in accordance with asme y14.5m, diameters are equivalent to x symbology. 4 ceramic package only. dimensions ltr inches millimeters min max min max bl .345 .360 8.77 bw .280 .295 7.11 ch .095 .115 2.41 ll 1 .040 .055 1.02 ll 2 .055 .065 1.40 ls .050 bsc 1.27 bsc ls 1 .025 bsc 0.635 bsc ls 2 .008 bsc 0.203 bsc lw .020 .030 0.51 0.76 q 1 .105 ref 2.67 ref q 2 .120 ref 3.05 ref q 3 .045 .055 1.14 1.40 tl .070 .080 1.78 2.03 tw .120 .130 3.05 3.30 figure 2. physical dimensions for lcc .
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